| PART |
Description |
Maker |
| MT88E41 MT88E41AE MT88E41AS MT88E41AN |
CMOS Extended Voltage Calling Number Identification Circuit (ECNIC)
|
ZARLINK[Zarlink Semiconductor Inc]
|
| MT88E46 MT88E46AS |
Bellcore Compliant Calling Number Identification Circuit TELEPHONE CALLING NO IDENT CKT, PDSO20
Dual inputs (tip/ring and 4 wire) Bellcore compliant Extended Voltage Calling Number Identification Circuit for CID, CIDCW and CWD (Type 2 and 2.5)
|
Zarlink Semiconductor, Inc.
Zarlink Semiconductor Inc.
|
| MT88E43B |
Extended Voltage Calling Number Identification Circuit for CLIP, CID and CIDCW applications (Type 2)
|
Zarlink Semiconductor
|
| KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 K |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
|
Samsung Electronic
|
| K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HCMS-235 HCMS-2351 HCMS-2353 HCMS-235X |
HCMS-2351 · CMOS Extended Temperature Range 5x7 Alphanumeric Display
CMOS Extended Temperature Range 5 x 7 Alphanumeric Display
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| ICS1660 ICS1660M ICS1660N ICS1660MLF ICS1660NLF |
TELEPHONE CALLING NO IDENT CKT, PDIP18
TELEPHONE CALLING NO IDENT CKT, PDSO20
Incoming Call Line Identification (ICLID) Receiver with Ring Detection
|
INTEGRATED DEVICE TECHNOLOGY INC
ICST[Integrated Circuit Systems]
http://
|
| KM416V4104B KM416V4004B KM416V4004BSL-45 KM416V400 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
| K4E660812E-TC_L K4E640812E K4E640812E-JC_L K4E6408 |
8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
